硅单晶中非平衡载流子寿命与注入水平的关系研究

高英; 孙燕; 王昕; 李俊生; 田蕾; 李兰兰; 叶灿明

doi:10.12338/j.issn.2096-9015.2019.9050

硅单晶中非平衡载流子寿命与注入水平的关系研究

doi: 10.12338/j.issn.2096-9015.2019.9050

高英^1,,
孙燕^2, ,,
王昕³,
李俊生³,
田蕾³,
李兰兰¹,
叶灿明³

1.
中国计量科学研究院，北京 100029
2.
有研半导体材料股份有限公司，北京 100088
3.
广州市昆德科技有限公司，广州 511300

详细信息

作者简介:
高英（1963-），中国计量科学研究院高级工程师，研究方向：半导体材料参数计量、测试方法研究，邮箱：gaoying@nim.ac.cn

通讯作者:
孙燕（1954-），有研半导体材料股份有限公司高级工程师，研究方向：半导体材料测试方法研究、标准制定等，邮箱：sunyanlsu@126.com

计量
- 文章访问数: 684
- HTML全文浏览量: 148
- PDF下载量: 92
- 被引次数: 0
出版历程
- 网络出版日期: 2021-04-15
- 刊出日期: 2021-08-01

Study on the Relationship between Non-Equilibrium Carrier Lifetime and Injection Level in Single Crystalline Silicon

1.
National Institute of Metrology, Beijing 100029, China
2.
GRINM Semiconductor Materials Co., Ltd., Beijing 100088, China
3.
Guangzhou Kunde Technology Co., Ltd., Guangzhou 511300, China

摘要

摘要: 阐述了硅单晶中非平衡载流子寿命与注入水平的函数关系以及少子寿命与复合寿命的区别，通过变光强测量得到一组寿命与注入水平的实测数据，用拟合法求得少子寿命及复合寿命与注入水平的函数曲线，所得结果与S-R-H理论模型相符。根据理论与实验成果，提出改进寿命测试一致性的方案，同时为发行少子寿命标准样品奠定了基础。
- 硅单晶 /
- 非平衡载流子寿命 /
- 注入水平 /
- 少子寿命
Abstract: The functional relationship between the non-equilibrium carrier lifetime and the injection level in single crystalline silicon, and the difference between the minority-carrier lifetime and the recombination lifetime of minority- and majority-carrier are elaborated. A set of measured lifetime and injection level data are obtained by the variable light intensity measurement. The function curves of the carrier lifetime and the injection level are obtained by the fitting method, which is consistent with the S-R-H model. According to the theory and experimental results, the scheme of improving the consistency of carrier lifetime measurement is proposed, and the foundation for the production of the minority-carrier lifetime reference material is laid.
- single crystalline silicon /
- non-equilibrium carrier lifetime /
- injection level /
- minority-carrier lifetime

HTML全文

图 1 SEMI MF1535复合寿命与注入比的函数关系

Figure 1. The relationship between the recombination lifetime of SEMI MF1535 and the injection ratio

下载: 全尺寸图片幻灯片

图 2 N型单晶硅寿命与注入比关系

Figure 2. The relationship between the lifetime of N-type single crystalline silicon and the injection ratio

下载: 全尺寸图片幻灯片

图 3 P型单晶硅寿命与注入比关系

Figure 3. The relationship between the lifetime of P-type single crystalline silicon and the injection ratio

下载: 全尺寸图片幻灯片

表 1 硅单晶寿命测量选用注入比

Table 1. Injection ratio selected for single crystalline silicon lifetime measurement

电阻率Ω·cm	所需注入比η	型号	单晶生长工艺	光源
0.5~1	2×10⁻³	N或P	CZ/FZ	1.06 μm波长激光器
1~2	1×10⁻²	N或P	CZ/FZ	1.06 μm波长激光器
2~3	2×10⁻²	N或P	CZ/FZ	1.06 μm波长激光器
3~5	3×10⁻²	N或P	CZ/FZ	1.06 μm波长激光器
5~10	1×10⁻²	N或P	CZ/FZ	1.06 μm波长发光二极管
10~30	4×10⁻²	N	CZ/FZ
30~100	0.05	N	FZ/CZ
100~300	0.1	N	FZ
>300	0.15	N或P	FZ
注：表1中CZ为直拉单晶，FZ为区熔单晶。

下载: 导出CSV

表 2 N型硅单晶少子寿命τ₀测试及相对标准偏差

Table 2. Measurement and relative standard deviation of minority carrier lifetime τ₀ of N-type single crystalline silicon

ρ(Ω·cm)	$ {\tau }_{0} $(µs)
ρ(Ω·cm)	$ {\tau }_{01} $	$ {\tau }_{02} $	$ {\tau }_{03} $	$ {\tau }_{04} $	$ {\tau }_{05} $	$ {\tau }_{06} $	$ \overline{{\tau }_{0}} $	RSD(%)
26.6	184.7	188.0	188.0	188.3	189.4	189.2	187.93	0.91
55	160.2	160.8	161.4	160.4	160.3	160.9	160.68	0.27
95	613.5	601.8	603.6	609.4	608.2	605.3	606.99	0.56
185	1010	1026.6	1024.5	1025.8	1038.1	1046.7	1028.62	1.23
272	1270.6	1286.1	1274.6	1284.2	1274.3	1294.9	1301.52	1.21
3700	302.9	311.8	306.9	309.3	311.6	316.8	309.88	1.54

下载: 导出CSV

表 3 P型硅单晶少子寿命τ₀测试及相对标准偏差

Table 3. Measurement and relative standard deviation of minority carrier lifetime τ₀ of P-type single crystalline silicon

ρ(Ω·cm)	$ {\tau }_{0} $(µs)
ρ(Ω·cm)	$ {\tau }_{01} $	$ {\tau }_{02} $	$ {\tau }_{03} $	$ {\tau }_{04} $	$ {\tau }_{05} $	$ {\tau }_{06} $	$ \overline{{\tau }_{0}} $	RSD(%)
10000-20000	520.8	531.5	523.5	525.9	519.8	525.2	524.45	0.80
1066	454.5	448.5	453.9	460.7	460.0	455.4	455.50	0.98
3.3	258.6	234.4	230.7	235.2	236.6	234.7	238.37	4.24
1.2(Ga)	331.8	344.8	325.4	344.6	316.9	367	338.42	5.24
0.66	40.6	34.9	31.3	33.3	34.4	31.5	34.33	9.91
0.5	80.15	76.78	89.29	85.79	102.97	93.84	88.14	12.2

下载: 导出CSV

表 4 N型单晶$ {\tau }_{0} $与$ {\tau }_{\infty } $

Table 4. N-type single crystalline silicon τ₀ and τ_∞

ρ(Ω·cm)	$ {\tau }_{0} $(µs)	$ {\tau }_{\infty } $(µs)	$ {\tau }_{\infty }/{\tau }_{0} $
26.83	232	1062	4.5
55	160	525	3.2
183	1043.6	1920.89	1.8
272	1301.4	2121.6	1.6
3700	309.9	751.2	2.4

下载: 导出CSV

表 5 P型单晶$ {\tau }_{0} $与$ {\tau }_{\infty } $

Table 5. P-type single crystalline silicon τ₀ and τ_∞

ρ(Ω·cm)	$ {\tau }_{0} $(µs)	$ {\tau }_{\infty } $(µs)	$ {\tau }_{\infty }/{\tau }_{0} $
0.66	34.33	4577	133
1.3	46.47	3092.3	66.5
3.3	238.3	6007	25.2
0.5	88.14	12547	142.3
1.2	331.8	13382.4	40.3

下载: 导出CSV

表 6 高、中、低阻硅单晶两种设备测量结果的对比

Table 6. Comparison of measurement results of high, medium and low resistance single crystalline silicon devices

ρ(Ω·cm)	注入比	示波器测量τ(μs)	计算机软件测量τ(μs)	百分偏差（%）
5	0.01	44	44	0
55	0.05	177	178	0.4
95	0.05	578	596	2.17
272	0.1	1190	1118	4.41
10000	0.15	764	764	0

下载: 导出CSV

表 7 6台LT-100寿命仪的测量结果

Table 7. Measurement results of 6 LT-100 life testers

仪器序号	光强指示读数(V)	信号幅值 △V	检波电压表读数V_DC	注入比η	寿命（μs）
1	2.98	560 mv/div×6 div	0.78	0.144	376
2	2.82	570 mv/div×6 div	0.78	0.146	379
3	3.70	560 mv/div×6 div	0.81	0.138	375
4	2.90	560 mv/div×6 div	0.91	0.123	362
5	3.57	560 mv/div×6 div	0.80	0.14	370
6	3.03	540 mv/div×6 div	0.81	0.133	362

下载: 导出CSV

表 8 2台LT-1000寿命仪的测量结果比对

Table 8. Comparison of the Measurement Results of 2 LT-1000 Life Testers

样品编号	1号机		2号机		τ₀百分偏差（%）
	寿命（µs）
	τ₀	τ_∞	τ₀	τ_∞
1	88	330	86.9	358	0.89
2	235.4	626.9	228.6	592.1	2.07
3	797.1	3157	822.1	3113	2.18
4	425.8	2010	434.6	2499	1.45
5	492.7	1325	535.3	1184	5.86

下载: 导出CSV

参考文献(12)

[1]	SEMI MF28-0707 TEST METHODS FOR MINORITY CARRIER LIFETIME IN BULK GERMANIUM AND SILICON BY MEASUREMENT OF PHOTOCONDUCTIVITY DECAY: ASTM F 25-63T[S].ASTM International, 2006.
[2]	SEMI MF1535-0707 TEST METHOD FOR CARRIER RECOMBINATION LIFETIME IN SILICON WAFERS BY NON-CONTACT MEASUREMENT OF PHOTOCONDUCTIVITY DECAY BY MICROWAVE REFLECTANCE: ASTM F 1535-94[S].ASTM International, 2006.
[3]	Bothe K, Schmidt J. Electronically activated boron-oxygen-related recombination centers in crystalline silicon[J]. Journal of Applied Physics, 2006, 99(1): 404. doi: 10.1063/1.2140584
[4]	Test Method for Contactless Excess-Charge-Carrier Recombination Lifetime Measurement in Silicon Wafers, Ingots, and Bricks Using an Eddy-Current Sensor: SEMI PV13-0714(Reapproved 0121)[S].
[5]	Hall R N. Electron-Hole Recombination in Germanium[J]. Physical Review, 1952, 87(2): 387.
[6]	Shockley W, Read W T. Statistics of the recombinations of holes and electrons[J]. physical review, 1952, 87(5): 835-842. doi: 10.1103/PhysRev.87.835
[7]	Blakemore J S. Semiconductor Statistics[M]. Oxford: Pergamon Press, 1962: 258-342.
[8]	阙端麟, 赵榕椿, 姚野, 等. 高频1.09 μm红外光电导衰减法测试硅单晶非平衡载流子寿命[J]. 浙江大学学报, 1985(2): 6-14.
[9]	Standard Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe: SEMI MF84-0312(Reapproved 0718)[S].
[10]	Test Method for Excess Charge Carrier Decay in PV Silicon Materials by Non-Contact Measurements of Microwave Reflectance After a Short Illumination Pulse:SEMI PV9-0611(Reapproved 1215)[S].
[11]	邵铮铮, 李修建, 戴荣铭. 太阳能电池用多晶硅材料少数载流子寿命的测试[J]. 大学物理实验, 2015(3): 21-24.
[12]	佟丽英, 王俭峰, 史继祥, 等. 高频光电导衰减法测试Ge单晶少数载流子寿命[J]. 半导体技术, 2010, 35(11): 1102-1105. doi: 10.3969/j.issn.1003-353x.2010.11.014