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基于银掺杂法的碲化钨磁阻材料制备及磁阻性能研究

曹明星 武彤 徐定华 贺建

曹明星,武彤,徐定华,等. 基于银掺杂法的碲化钨磁阻材料制备及磁阻性能研究[J]. 计量科学与技术,2022, 66(8): 50-56 doi: 10.12338/j.issn.2096-9015.2021.0624
引用本文: 曹明星,武彤,徐定华,等. 基于银掺杂法的碲化钨磁阻材料制备及磁阻性能研究[J]. 计量科学与技术,2022, 66(8): 50-56 doi: 10.12338/j.issn.2096-9015.2021.0624
CAO Mingxing, WU Tong, XU Dinghua, HE Jian. Preparation and Magnetoresistive Properties of Tungsten Telluride Magnetoresistive Materials Based on Silver Doping Method[J]. Metrology Science and Technology, 2022, 66(8): 50-56. doi: 10.12338/j.issn.2096-9015.2021.0624
Citation: CAO Mingxing, WU Tong, XU Dinghua, HE Jian. Preparation and Magnetoresistive Properties of Tungsten Telluride Magnetoresistive Materials Based on Silver Doping Method[J]. Metrology Science and Technology, 2022, 66(8): 50-56. doi: 10.12338/j.issn.2096-9015.2021.0624

基于银掺杂法的碲化钨磁阻材料制备及磁阻性能研究

doi: 10.12338/j.issn.2096-9015.2021.0624
基金项目: 国家市场监督管理总局质量技术监督能力提升专项(ANL1912)。
详细信息
    作者简介:

    曹明星(1994-),中国计量科学研究院助理工程师,研究方向:磁性材料、磁电阻材料、防伪技术等,邮箱:caomx@nim.ac.cn

    通讯作者:

    徐定华(1974-),中国计量科学研究院副研究员,研究方向:测试计量技术及仪器,邮箱:xudh@nim.ac.cn

Preparation and Magnetoresistive Properties of Tungsten Telluride Magnetoresistive Materials Based on Silver Doping Method

  • 摘要: 碲化钨磁阻材料具有优良的非饱和磁电阻效应,基于碲化钨磁阻材料的信息存储技术和磁传感器制造技术,代表了磁阻研究的重要方向。通过掺杂的方法可以改变材料的磁、电学性能,为了探究碲化钨(WTe2)能否通过银(Ag)掺杂法得到优异性能,详细介绍了如何选择掺杂方法,以及为何选择银作为掺杂元素。建立了一种温和制备大块体掺银碲化钨(WTe2/Ag)磁阻材料的方法,即新型的自助熔剂烧结法,制备了三种不同Ag掺杂量的WTe2/Ag典型材料,对其物相、价态、结构进行表征与评价,并对磁阻性能进行测试分析。研究结果表明:选择银掺杂法具有优异性,制备所得的WTe2/Ag材料不仅质量可靠,而且有效提升了磁电阻效应,使得磁电阻在测试最高值时的控制条件更易实现。测试得到的磁电阻在5 K、14 T时为502.3%,相比未掺杂时提高了50%,相比掺杂其他元素其磁电性能有极大提升,对电磁学器件的优化设计及实际应用具有积极的意义。
  • 图  1  所制备WTe2/Ag材料的测试方法

    Figure  1.  Testing method of the prepared WTe2/Ag materials

    图  2  材料晶体结构图

    Figure  2.  Crystal structure diagram of materials

    图  3  所制备WTe2/Ag材料的电阻率随磁场和温度的变化曲线

    Figure  3.  Variation curve of the resistivity of the prepared WTe2/Ag materials with magnetic field and temperature

    图  4  所制备WTe2/Ag材料的磁电阻随磁场和温度的变化曲线

    Figure  4.  Variation curve of the magnetoresistance of the prepared WTe2/Ag materials with magnetic field and temperature

    图  5  材料载流子运动受力图

    Figure  5.  Motion force diagram of the carrier of the material

  • [1] Yi Y, Wu C, Wang H, et al. Thickness Dependent Magneto Transport Properties of WTe2 Thin Films[J]. Solid State Communications, 2017, 260: 45-49. doi: 10.1016/j.ssc.2017.05.017
    [2] Lv H Y, Lu W J, Shao D F, et al. Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer[J]. Europhysics Letters, 2015, 110(3): 37004. doi: 10.1209/0295-5075/110/37004
    [3] Shuang Li, Feng-cai Lei, Xu Peng, et al. Synthesis of semiconducting 2H-phase WTe2 nanosheets with large positive magnetoresistance[J]. Inorganic Chemistry, 2020, 59(17): 11935-11939. doi: 10.1021/acs.inorgchem.0c02049
    [4] Ali M N, Xiong J, Flynn S. Large, non-saturating magnetoresistance in WTe2[J]. Nature, 2014, 514(7521): 205-208. doi: 10.1038/nature13763
    [5] Gong J, Yang J, Ge M, et al. Non-Stoichiometry Effects on the Extreme Magnetoresistance in Weyl Semimetal WTe2[J]. Chinese Physics Letters, 2018, 35(9): 97101. doi: 10.1088/0256-307X/35/9/097101
    [6] Flynn S, Ali M, Cava R J. The effect of dopants on the magnetoresistance of WTe2[J]. University of Kent, 2015, 17(1): 213-220.
    [7] Yang L, Wu H, Zhang L, et al. Highly tunable near-room temperature ferromagnetism in Cr-doped layered Td-WTe2[J]. Advanced Functional Materials, 2021, 31: 2008116. doi: 10.1002/adfm.202008116
    [8] Zhu L, Li Q Y, Lv Y Y, et al. Superconductivity in potassium-intercalated Td-WTe2[J]. Nano letters, 2019, 18: 6585-6590.
    [9] 付东之. WTe2, PtTe2等第二类拓扑半金属的输运性质研究[D]. 南京: 南京大学, 2018.
    [10] Xu R, Husmann A, Rosenbaum T F, et al. Large magnetoresistance in non-magnetic silver chalcogenides[J]. Nature (London), 1997, 390: 57-60. doi: 10.1038/36306
    [11] Husmann A, Betts J B, Boebinger G S, et al. Megagauss Sensor[J]. Nature (London), 2002, 417: 421-424. doi: 10.1038/417421a
    [12] Chen P, Zhao X, Wang T, et al. Electronic and magnetic properties of Ag-doped monolayer WS2 by stain[J]. Journal of Alloys and Compounds, 2016, 680: 659-664.
    [13] Look D C, Renlund G M, Burgener R H, et al. As-doped p-type ZnO produced by an evaporation∕sputtering process[J]. Applied Physics Letters, 2004, 85(22): 5269-5271. doi: 10.1063/1.1825615
    [14] Belgacem T, A Ben F, Bouguila N. Electrical behavior and photocatalytic activity of Ag-doped In2S3 thin films[J]. Journal of Electronic Materials, 2021, 50: 3739-3747. doi: 10.1007/s11664-021-08865-0
    [15] 王志宏, 曹明星, 马立文, 等. 一种二碲化钨的制备方法: CN109516444A[P]. 2019-3-26.
    [16] Zhou Y, Reed E J. Structural phase stability control of monolayer MoTe2 with adsorbed atoms and molecules[J]. The Journal of Physical Chemistry C, 2015, 119(37): 21674-21680. doi: 10.1021/acs.jpcc.5b05770
    [17] Jana M K, Singh A, Late D J, et al. A combined experimental and theoretical study of the structural, electronic and vibrational properties of bulk and few-layer Td-WTe2[J]. Journal of Physics Condensed Matter, 2015, 27(28): 285401. doi: 10.1088/0953-8984/27/28/285401
    [18] Kong W D, Wu S F, Richard P, et al. Raman scattering investigation of large positive magnetoresistance material WTe2[J]. Applied Physics Letters, 2015, 106(8): 081906. doi: 10.1063/1.4913680
    [19] Yoo Y, Degregorio Z P, Su Y, et al. In-plane 2H-1T’MoTe2 homojunctions synthesized by flux-controlled phase engineering[J]. Advanced Materials, 2017, 29(16): 1605461. doi: 10.1002/adma.201605461
    [20] 宋庆功, 王延峰, 宋庆龙, 等. 插层化合物Ag(1/4)TiSe2电子结构的第一性原理研究[J]. 物理学报, 2008, 57(12): 419-424.
    [21] 侯瑞芬, 张志高, 许志一, 等. 烧结钕铁硼饱和磁化行为研究[J]. 计量科学与技术, 2021, 65(5): 93-95,35. doi: 10.12338/j.issn.2096-9015.2020.9012
    [22] 国家市场监督管理总局. 规程测量不确定度评定与表示: JJF 1059. 1-2017[S]. 北京: 中国标准出版社, 2017.
    [23] Chung K H, Kim S N, Lim S H. Magnetic parameters in giant magnetoresistance spin valve and their roles in magnetoresistance sensitivity[J]. Thin Solid Films, 2018, 650(31): 44-50.
    [24] 陈川, 宋文涛, 周新华. 电工钢磁性能测量用单片测试仪的磁轭损耗的研究与分析[J]. 计量科学与技术, 2022, 66(5): 49-54.
    [25] Mingxing Cao, Zhihong Wang, Liwen Ma, et al. Tungsten ditelluride: synthesis, structure, and magnetoresistance property[J]. Adv Electron Mater, 2021, 993: 2000893.
    [26] 杨伟峰. 巨大磁电阻材料WTe2的制备及其磁电输运特性[D]. 杭州: 杭州电子科技大学, 2016.
    [27] Cai P L, Hu J, He L P. Drastic pressure effect on the extremely large magnetoresistance in WTe2: a quantum oscillation study[J]. Phys Rev Lett, 2015, 115: 057202. doi: 10.1103/PhysRevLett.115.057202
    [28] 梁亚星, 王秀峰, 金晓雪, 等. 氧化铝陶瓷材料电阻率精确测试方法[J]. 计量科学与技术, 2022, 66(1): 22-25.
    [29] 贺青, 邵海明, 梁成斌. 电磁计量学研究进展评述[J]. 计量学报, 2021, 42(11): 1543-1552. doi: 10.3969/j.issn.1000-1158.2021.11.21
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出版历程
  • 网络出版日期:  2022-04-22
  • 刊出日期:  2022-09-15

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