Development of a 22 Nano Line Width Standard Based on Intrinsic SiliconLattice Constants
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摘要: 纳米线宽作为典型纳米几何特征参量之一,其量值准确性对于先进制造等领域尤为重要。随着纳米尺度向着极小尺寸发展,测量精度要求达到亚纳米级,这给纳米线宽的精确测量带来了新的挑战。2018年第26届国际计量大会提出使用硅{220}晶面间距作为米定义的复现方式,这为原子尺度纳米线宽计量技术提供了新的思路与方法。基于多层膜沉积技术制备了22 nm内禀硅晶格的线宽标准器,采用高分辨透射电子显微镜,以标准器中的硅晶格常数为标尺实现对纳米线宽的直接测量,测量不确定度优于1 nm。Abstract: The measurement accuracy of nano line widths, a critical nano geometric characteristic parameter, is of paramount importance in fields such as advanced manufacturing. As the scale of nanotechnology continues to shrink, achieving sub-nanometer measurement accuracy presents new challenges. The 26th General Conference on Weights and Measures (CGPM) in 2018 proposed using the silicon {220} lattice spacing as a secondary realization of the meter, providing a novel approach for atomic-level nano line width measurements. In this study, a 22 nm intrinsic silicon lattice line width standard was developed using multi-layer film deposition technology. Employing high-resolution transmission electron microscopy (HRTEM), the silicon lattice constant within the standard was used as a scale for direct nano line width measurement. The measurement uncertainty achieved is better than 1 nm.
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表 1 高放大倍率对应的视场大小
Table 1. Field size corresponding to high magnification
高放大倍率 视场大小 285 k 74.375 nm×74.375 nm 400 k 53.155 nm×53.155 nm 450 k 47.847 nm×47.847 nm 690 k 31.572 nm×31.572 nm -
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