Study on the Relationship between Non-Equilibrium Carrier Lifetime and Injection Level in Single Crystalline Silicon

GAO Ying; SUN Yan; WANG Xin; LI Junsheng; TIAN Lei; LI Lanlan; YE Canming

doi:10.12338/j.issn.2096-9015.2019.9050

Volume 65 Issue 8

Aug. 2021

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GAO Ying, SUN Yan, WANG Xin, LI Junsheng, TIAN Lei, LI Lanlan, YE Canming. Study on the Relationship between Non-Equilibrium Carrier Lifetime and Injection Level in Single Crystalline Silicon[J]. Metrology Science and Technology, 2021, 65(8): 66-70. doi: 10.12338/j.issn.2096-9015.2019.9050

Citation:

GAO Ying, SUN Yan, WANG Xin, LI Junsheng, TIAN Lei, LI Lanlan, YE Canming. Study on the Relationship between Non-Equilibrium Carrier Lifetime and Injection Level in Single Crystalline Silicon[J]. Metrology Science and Technology, 2021, 65(8): 66-70. doi: 10.12338/j.issn.2096-9015.2019.9050

Citation:

GAO Ying, SUN Yan, WANG Xin, LI Junsheng, TIAN Lei, LI Lanlan, YE Canming. Study on the Relationship between Non-Equilibrium Carrier Lifetime and Injection Level in Single Crystalline Silicon[J]. Metrology Science and Technology, 2021, 65(8): 66-70. doi: 10.12338/j.issn.2096-9015.2019.9050

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Study on the Relationship between Non-Equilibrium Carrier Lifetime and Injection Level in Single Crystalline Silicon

doi: 10.12338/j.issn.2096-9015.2019.9050

1.
National Institute of Metrology, Beijing 100029, China
2.
GRINM Semiconductor Materials Co., Ltd., Beijing 100088, China
3.
Guangzhou Kunde Technology Co., Ltd., Guangzhou 511300, China

Available Online: 2021-04-15
Publish Date: 2021-08-01

Abstract

Abstract

The functional relationship between the non-equilibrium carrier lifetime and the injection level in single crystalline silicon, and the difference between the minority-carrier lifetime and the recombination lifetime of minority- and majority-carrier are elaborated. A set of measured lifetime and injection level data are obtained by the variable light intensity measurement. The function curves of the carrier lifetime and the injection level are obtained by the fitting method, which is consistent with the S-R-H model. According to the theory and experimental results, the scheme of improving the consistency of carrier lifetime measurement is proposed, and the foundation for the production of the minority-carrier lifetime reference material is laid.
- single crystalline silicon,
- non-equilibrium carrier lifetime,
- injection level,
- minority-carrier lifetime

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References(12)

References

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