Nanowire Width Metrology Technology Based on Lattice Constant of Silicon

WANG Fang; SHI Yushu; ZHANG Shu; LI Wei

doi:10.12338/j.issn.2096-9015.2021.0587

Volume 66 Issue 4

Jun. 2022

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WANG Fang, SHI Yushu, ZHANG Shu, LI Wei. Nanowire Width Metrology Technology Based on Lattice Constant of Silicon[J]. Metrology Science and Technology, 2022, 66(4): 13-18, 47. doi: 10.12338/j.issn.2096-9015.2021.0587

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WANG Fang, SHI Yushu, ZHANG Shu, LI Wei. Nanowire Width Metrology Technology Based on Lattice Constant of Silicon[J]. Metrology Science and Technology, 2022, 66(4): 13-18, 47. doi: 10.12338/j.issn.2096-9015.2021.0587

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Nanowire Width Metrology Technology Based on Lattice Constant of Silicon

doi: 10.12338/j.issn.2096-9015.2021.0587

National Institute of Metrology, Beijing 100029, China

Accepted Date: 2022-01-25

Available Online: 2022-02-10

Publish Date: 2022-06-02

Abstract

Abstract

With the continuous reduction of the critical dimension in integrated circuits, the measurement accuracy is required to reach the atomic level to ensure the effectiveness of devices, which brings new challenges to the precise measurement of the nanowire width. In 2018, the 26th Conférence Générale des poids et Mesures (CGPM) proposed the use of silicon {220} lattice spacing as a realization of the definition of the metre, which provides new ideas and methods for atomic scale nanowire width metrology technology. In China, we have mastered the measurement principle of the line width based on the lattice constant of silicon, developed a series of small-value nanowire width standards, and established intelligent methods for nanowire width estimation. These works are basic for the preliminary establishment of our nation’s atomic traceability system of the line width. In addition, we introduce the next stage of research goals of the line width measurement technology, the future influence in the world, and its supporting role in the development of large-scale integrated circuits with independent intellectual property rights in China.
- lattice constant of silicon,
- nanowire width,
- transmission electron microscopy,
- key dimensions,
- traceability

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References(18)

References

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