Development of a 22 Nano Line Width Standard Based on Intrinsic SiliconLattice Constants

WANG Fang; SHI Yushu; ZHANG Shu

doi:10.12338/j.issn.2096-9015.2023.0150

Volume 68 Issue 2

Feb. 2024

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WANG Fang, SHI Yushu, ZHANG Shu. Development of a 22 Nano Line Width Standard Based on Intrinsic SiliconLattice Constants[J]. Metrology Science and Technology, 2024, 68(2): 10-15, 59. doi: 10.12338/j.issn.2096-9015.2023.0150

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WANG Fang, SHI Yushu, ZHANG Shu. Development of a 22 Nano Line Width Standard Based on Intrinsic SiliconLattice Constants[J]. Metrology Science and Technology, 2024, 68(2): 10-15, 59. doi: 10.12338/j.issn.2096-9015.2023.0150

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Development of a 22 Nano Line Width Standard Based on Intrinsic SiliconLattice Constants

doi: 10.12338/j.issn.2096-9015.2023.0150

1.
National Institute of Metrology, Beijing 100029, China

Received Date: 2023-06-18
Accepted Date: 2023-06-26
Rev Recd Date: 2023-12-20

Available Online: 2023-12-28

Publish Date: 2024-02-18

Abstract

Abstract

The measurement accuracy of nano line widths, a critical nano geometric characteristic parameter, is of paramount importance in fields such as advanced manufacturing. As the scale of nanotechnology continues to shrink, achieving sub-nanometer measurement accuracy presents new challenges. The 26th General Conference on Weights and Measures (CGPM) in 2018 proposed using the silicon {220} lattice spacing as a secondary realization of the meter, providing a novel approach for atomic-level nano line width measurements. In this study, a 22 nm intrinsic silicon lattice line width standard was developed using multi-layer film deposition technology. Employing high-resolution transmission electron microscopy (HRTEM), the silicon lattice constant within the standard was used as a scale for direct nano line width measurement. The measurement uncertainty achieved is better than 1 nm.
- metrology,
- silicon lattice constant,
- nano line width,
- transmission electron microscopy,
- critical dimensions,
- traceability

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References(28)

References

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