Abstract: The functional relationship between the non-equilibrium carrier lifetime and the injection level in single crystalline silicon, and the difference between the minority-carrier lifetime and the recombination lifetime of minority- and majority-carrier are elaborated. A set of measured lifetime and injection level data are obtained by the variable light intensity measurement. The function curves of the carrier lifetime and the injection level are obtained by the fitting method, which is consistent with the S-R-H model. According to the theory and experimental results, the scheme of improving the consistency of carrier lifetime measurement is proposed, and the foundation for the production of the minority-carrier lifetime reference material is laid.