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Nanowire Width Metrology Technology Based on Lattice Constant of Silicon
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摘要: 随着集成电路中关键尺寸的不断减小，测量精度要求达到原子级才能保证器件的有效性，这给纳米线宽的精确测量带来了新的挑战。2018年第26届国际计量大会提出使用硅{220}晶面间距作为米定义的复现方式，这为原子尺度纳米线宽计量技术提供了新的思路与方法。目前，我国已掌握基于硅晶格常数的纳米线宽计量技术的原理，研制了系列小量值纳米线宽标准器，建立了纳米线宽的智能化定值方法，为初步建立我国自己的原子尺度纳米线宽计量溯源体系奠定了基础。此外，介绍了我国纳米线宽计量技术下一阶段的研究目标，并对我国纳米线宽计量技术未来在国际的影响力，以及在我国自主知识产权大规模集成电路发展中的支撑作用作出了展望。Abstract: With the continuous reduction of the critical dimension in integrated circuits, the measurement accuracy is required to reach the atomic level to ensure the effectiveness of devices, which brings new challenges to the precise measurement of the nanowire width. In 2018, the 26th Conférence Générale des poids et Mesures (CGPM) proposed the use of silicon {220} lattice spacing as a realization of the definition of the metre, which provides new ideas and methods for atomic scale nanowire width metrology technology. In China, we have mastered the measurement principle of the line width based on the lattice constant of silicon, developed a series of small-value nanowire width standards, and established intelligent methods for nanowire width estimation. These works are basic for the preliminary establishment of our nation’s atomic traceability system of the line width. In addition, we introduce the next stage of research goals of the line width measurement technology, the future influence in the world, and its supporting role in the development of large-scale integrated circuits with independent intellectual property rights in China.
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图 1 透射电镜中基于硅晶格常数的线宽测量原理
Figure 1. Principle of width measurement based on lattice constant of silicon in TEM
图 2 多结构硅纳米线宽标准物质的扫描电子显微镜图像
Figure 2. SEM image of the multi-structure silicon nanowire width reference material
图 3 透射电子显微镜放大倍率为145 k下获得的特征值为45 nm和22 nm线宽标准器的显微图像
Figure 3. TEM images of width standards with nominal value of 45 nm and 22 nm obtained at magnification of 145 k
图 6 强度曲线的分解与特征提取
Figure 6. Decomposition and feature extraction of the intensity profile
图 8 单晶硅的HRTEM图像及其对应的2D-DFT
Figure 8. HRTEM image of the single crystal silicon and its 2D-DFT result
图 9 2D-DFT图像的阈值分割结果及提取出的光斑
Figure 9. Segmentation result of 2D-DFT image and the extracted spots
图 12 采用Digital Micrograph软件测量晶面间距
Figure 12. Lattice plane measurement using Digital Micrograph
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