Abstract: Tungsten telluride magnetoresistive material has an excellent unsaturated magnetoresistance effect, and information storage technology and magnetic sensor fabrication technology based on tungsten telluride magnetoresistive materials represent an important direction in magnetoresistive research. The magnetic and electrical properties of materials can be changed by doping methods. To explore whether tungsten telluride magnetoresistive materials can obtain excellent performance by the silver doping method, a detailed introduction of how to choose the doping method and why choose silver as the doping element is discussed. A method for mild preparation of bulk silver-doped tungsten telluride (WTe₂/Ag) magnetoresistive materials was established, namely a novel self-flux sintering method. Three typical WTe₂/Ag materials with different silver doping contents were prepared. The characterization and evaluation of phase, valence state, structure, and magnetoresistance performance were tested and analyzed. The results indicated the excellence of the silver doping method, the prepared WTe₂/Ag not only has reliable material quality but also effectively enhances the magnetoresistance effect, making it easier to achieve the control conditions for the highest value of the magnetoresistance tested. The measured magnetoresistance is 502.3% at 5 K and 14 T, which is 50% higher than that without doping. The magnetoelectric performance is greatly improved compared with those of doped other elements, which is of positive significance for the optimal design and practical application of electromagnetic devices.