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硅单晶中非平衡载流子寿命与注入水平的关系研究

高英 孙燕 王昕 李俊生 田蕾 李兰兰 叶灿明

高英,孙燕,王昕,等. 硅单晶中非平衡载流子寿命与注入水平的关系研究[J]. 计量科学与技术,2021, 65(8): 66-70 doi: 10.12338/j.issn.2096-9015.2019.9050
引用本文: 高英,孙燕,王昕,等. 硅单晶中非平衡载流子寿命与注入水平的关系研究[J]. 计量科学与技术,2021, 65(8): 66-70 doi: 10.12338/j.issn.2096-9015.2019.9050
GAO Ying, SUN Yan, WANG Xin, LI Junsheng, TIAN Lei, LI Lanlan, YE Canming. Study on the Relationship between Non-Equilibrium Carrier Lifetime and Injection Level in Single Crystalline Silicon[J]. Metrology Science and Technology, 2021, 65(8): 66-70. doi: 10.12338/j.issn.2096-9015.2019.9050
Citation: GAO Ying, SUN Yan, WANG Xin, LI Junsheng, TIAN Lei, LI Lanlan, YE Canming. Study on the Relationship between Non-Equilibrium Carrier Lifetime and Injection Level in Single Crystalline Silicon[J]. Metrology Science and Technology, 2021, 65(8): 66-70. doi: 10.12338/j.issn.2096-9015.2019.9050

硅单晶中非平衡载流子寿命与注入水平的关系研究

doi: 10.12338/j.issn.2096-9015.2019.9050
详细信息
    作者简介:

    高英(1963-),中国计量科学研究院高级工程师,研究方向:半导体材料参数计量、测试方法研究,邮箱:gaoying@nim.ac.cn

    通讯作者:

    孙燕(1954-),有研半导体材料股份有限公司高级工程师,研究方向:半导体材料测试方法研究、标准制定等,邮箱:sunyanlsu@126.com

Study on the Relationship between Non-Equilibrium Carrier Lifetime and Injection Level in Single Crystalline Silicon

  • 摘要: 阐述了硅单晶中非平衡载流子寿命与注入水平的函数关系以及少子寿命与复合寿命的区别,通过变光强测量得到一组寿命与注入水平的实测数据,用拟合法求得少子寿命及复合寿命与注入水平的函数曲线,所得结果与S-R-H理论模型相符。根据理论与实验成果,提出改进寿命测试一致性的方案,同时为发行少子寿命标准样品奠定了基础。
  • 图  1  SEMI MF1535复合寿命与注入比的函数关系

    Figure  1.  The relationship between the recombination lifetime of SEMI MF1535 and the injection ratio

    图  2  N型单晶硅寿命与注入比关系

    Figure  2.  The relationship between the lifetime of N-type single crystalline silicon and the injection ratio

    图  3  P型单晶硅寿命与注入比关系

    Figure  3.  The relationship between the lifetime of P-type single crystalline silicon and the injection ratio

    表  1  硅单晶寿命测量选用注入比

    Table  1.   Injection ratio selected for single crystalline silicon lifetime measurement

    电阻率Ω·cm所需注入
    η
    型号单晶生长
    工艺
    光源
    0.5~12×10−3N或PCZ/FZ1.06 μm波长激光器
    1~21×10−2N或PCZ/FZ1.06 μm波长激光器
    2~32×10−2N或PCZ/FZ1.06 μm波长激光器
    3~53×10−2N或PCZ/FZ1.06 μm波长激光器
    5~101×10−2N或PCZ/FZ1.06 μm波长发光
    二极管
    10~304×10−2NCZ/FZ
    30~1000.05NFZ/CZ
    100~3000.1NFZ
    >3000.15N或PFZ
    注:表1中CZ为直拉单晶,FZ为区熔单晶。
    下载: 导出CSV

    表  2  N型硅单晶少子寿命τ0测试及相对标准偏差

    Table  2.   Measurement and relative standard deviation of minority carrier lifetime τ0 of N-type single crystalline silicon

    ρ(Ω·cm)$ {\tau }_{0} $(µs)
    $ {\tau }_{01} $$ {\tau }_{02} $$ {\tau }_{03} $$ {\tau }_{04} $$ {\tau }_{05} $$ {\tau }_{06} $$ \overline{{\tau }_{0}} $RSD(%)
    26.6184.7188.0188.0188.3189.4189.2187.930.91
    55160.2160.8161.4160.4160.3160.9160.680.27
    95613.5601.8603.6609.4608.2605.3606.990.56
    18510101026.61024.51025.81038.11046.71028.621.23
    2721270.61286.11274.61284.21274.31294.91301.521.21
    3700302.9311.8306.9309.3311.6316.8309.881.54
    下载: 导出CSV

    表  3  P型硅单晶少子寿命τ0测试及相对标准偏差

    Table  3.   Measurement and relative standard deviation of minority carrier lifetime τ0 of P-type single crystalline silicon

    ρ(Ω·cm)$ {\tau }_{0} $(µs)
    $ {\tau }_{01} $$ {\tau }_{02} $$ {\tau }_{03} $$ {\tau }_{04} $$ {\tau }_{05} $$ {\tau }_{06} $$ \overline{{\tau }_{0}} $RSD(%)
    10000-20000520.8531.5523.5525.9519.8525.2524.450.80
    1066454.5448.5453.9460.7460.0455.4455.500.98
    3.3258.6234.4230.7235.2236.6234.7238.374.24
    1.2(Ga)331.8344.8325.4344.6316.9367338.425.24
    0.6640.634.931.333.334.431.534.339.91
    0.580.1576.7889.2985.79102.9793.8488.1412.2
    下载: 导出CSV

    表  4  N型单晶$ {\tau }_{0} $$ {\tau }_{\infty } $

    Table  4.   N-type single crystalline silicon τ0 and τ

    ρ(Ω·cm)$ {\tau }_{0} $(µs)$ {\tau }_{\infty } $(µs)$ {\tau }_{\infty }/{\tau }_{0} $
    26.8323210624.5
    551605253.2
    1831043.61920.891.8
    2721301.42121.61.6
    3700309.9751.22.4
    下载: 导出CSV

    表  5  P型单晶$ {\tau }_{0} $$ {\tau }_{\infty } $

    Table  5.   P-type single crystalline silicon τ0 and τ

    ρ(Ω·cm)$ {\tau }_{0} $(µs)$ {\tau }_{\infty } $(µs)$ {\tau }_{\infty }/{\tau }_{0} $
    0.6634.334577133
    1.346.473092.366.5
    3.3238.3600725.2
    0.588.1412547142.3
    1.2331.813382.440.3
    下载: 导出CSV

    表  6  高、中、低阻硅单晶两种设备测量结果的对比

    Table  6.   Comparison of measurement results of high, medium and low resistance single crystalline silicon devices

    ρ(Ω·cm)注入比示波器测
    τ(μs)
    计算机软件
    测量τ(μs)
    百分偏差(%)
    50.0144440
    550.051771780.4
    950.055785962.17
    2720.1119011184.41
    100000.157647640
    下载: 导出CSV

    表  7  6台LT-100寿命仪的测量结果

    Table  7.   Measurement results of 6 LT-100 life testers

    仪器
    序号
    光强指示
    读数(V)
    信号幅值
    V
    检波电压
    表读数VDC
    注入比η寿命
    (μs)
    12.98560 mv/div×6 div0.780.144376
    22.82570 mv/div×6 div0.780.146379
    33.70560 mv/div×6 div0.810.138375
    42.90560 mv/div×6 div0.910.123362
    53.57560 mv/div×6 div0.800.14370
    63.03540 mv/div×6 div0.810.133362
    下载: 导出CSV

    表  8  2台LT-1000寿命仪的测量结果比对

    Table  8.   Comparison of the Measurement Results of 2 LT-1000 Life Testers

    样品编号1号机2号机τ0百分偏差(%)
    寿命(µs)
    τ0ττ0τ
    18833086.93580.89
    2235.4626.9228.6592.12.07
    3797.13157822.131132.18
    4425.82010434.624991.45
    5492.71325535.311845.86
    下载: 导出CSV
  • [1] SEMI MF28-0707 TEST METHODS FOR MINORITY CARRIER LIFETIME IN BULK GERMANIUM AND SILICON BY MEASUREMENT OF PHOTOCONDUCTIVITY DECAY: ASTM F 25-63T[S].ASTM International, 2006.
    [2] SEMI MF1535-0707 TEST METHOD FOR CARRIER RECOMBINATION LIFETIME IN SILICON WAFERS BY NON-CONTACT MEASUREMENT OF PHOTOCONDUCTIVITY DECAY BY MICROWAVE REFLECTANCE: ASTM F 1535-94[S].ASTM International, 2006.
    [3] Bothe K, Schmidt J. Electronically activated boron-oxygen-related recombination centers in crystalline silicon[J]. Journal of Applied Physics, 2006, 99(1): 404. doi: 10.1063/1.2140584
    [4] Test Method for Contactless Excess-Charge-Carrier Recombination Lifetime Measurement in Silicon Wafers, Ingots, and Bricks Using an Eddy-Current Sensor: SEMI PV13-0714(Reapproved 0121)[S].
    [5] Hall R N. Electron-Hole Recombination in Germanium[J]. Physical Review, 1952, 87(2): 387.
    [6] Shockley W, Read W T. Statistics of the recombinations of holes and electrons[J]. physical review, 1952, 87(5): 835-842. doi: 10.1103/PhysRev.87.835
    [7] Blakemore J S. Semiconductor Statistics[M]. Oxford: Pergamon Press, 1962: 258-342.
    [8] 阙端麟, 赵榕椿, 姚野, 等. 高频1.09 μm红外光电导衰减法测试硅单晶非平衡载流子寿命[J]. 浙江大学学报, 1985(2): 6-14.
    [9] Standard Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe: SEMI MF84-0312(Reapproved 0718)[S].
    [10] Test Method for Excess Charge Carrier Decay in PV Silicon Materials by Non-Contact Measurements of Microwave Reflectance After a Short Illumination Pulse:SEMI PV9-0611(Reapproved 1215)[S].
    [11] 邵铮铮, 李修建, 戴荣铭. 太阳能电池用多晶硅材料少数载流子寿命的测试[J]. 大学物理实验, 2015(3): 21-24.
    [12] 佟丽英, 王俭峰, 史继祥, 等. 高频光电导衰减法测试Ge单晶少数载流子寿命[J]. 半导体技术, 2010, 35(11): 1102-1105. doi: 10.3969/j.issn.1003-353x.2010.11.014
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  • 网络出版日期:  2021-04-15

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