Online Calibration of CD-SEM Magnification Based on Nanolattice Pitch Wafer Standard
-
摘要: 半导体制程中特征尺寸扫描电子显微镜(CD-SEM)是用于芯片特征尺寸在线测量的高精度设备,其测量结果会直接影响器件电性能参数评估和电路产品可靠性判断。对CD-SEM的计量特性评价,国内目前仍缺乏专用计量标准器具和校准规范,在实际工作中,大多参照JJF 1916-2021《扫描电子显微镜校准规范》进行测长示值误差的在线计量。基于100 nm晶圆栅格标准样片对CD-SEM放大倍数在线校准方法进行了重点讨论,并结合实例阐述了特定放大倍数下不确定度分析过程和结果符合性判定方法,同时进一步对校准过程中的3类问题和相应解决措施进行了总结,对今后集成电路纳米级参数测量设备在线校准研究具有借鉴意义。Abstract: In semiconductor manufacturing, the critical dimension scanning electron microscope (CD-SEM) is a high-precision device used for the online measurement of chip feature size. The measurement results directly affect the evaluation of device electrical performance parameters and the judgment of circuit product reliability. However, there is still a lack of special measuring standards and calibration specifications for evaluating the measurement characteristics of CD-SEM. As a result, most calibrators refer to the JJF 1916-2021 Calibration Specification for Scanning Electron Microscopes (SEM) for online measurement of length indication errors in practice. The essence of using the nanolattice pitch standard to calibrate the CD-SEM magnification is to observe the measured image and obtain the pitch result by setting various instrument parameters and multiple pitches under different magnification conditions. Subsequently, the measured pitch result is compared to the certificate value of the standard to determine whether the instrument status is normal and whether the measurement accuracy meets process requirements. In this paper, we discuss an online calibration method of CD-SEM magnification based on the 100 nm nanolattice pitch wafer standard and introduce the measurement principle. We then describe the uncertainty analysis and conformity decision method of results under specific magnification with specific examples. Additionally, we briefly introduce three problems of the calibration process, such as the deterioration of the wafer standard, the noise of the measuring instrument, and contamination caused by an improper operational program. Finally, we summarize corresponding solutions, which have some reference value for future research on the online calibration of integrated circuit nano-parameters measurement equipment.
-
表 1 放大倍数与栅格周期对应关系
Table 1. Correspondence between magnification and nanolattice pitch
栅格周期值/nm 100 200 400 800 1000 放大倍数/k 250 100 50 20 10 表 2 250 k放大倍数在线校准结果
Table 2. Online calibrating results of the 250 k magnification
/nm 标准值 9个位置的测量结果 99.7 97.7 99.1 98.5 99.4 100.0 98.1 99.8 99.1 98.4 / -
[1] JOY D C. Overview of CD‐SEM—and beyond[J]. AIP Conference Proceedings, 2003, 683(1): 619-626. [2] GUTMAN N, TARSHISH I, GRONHEID R, et al. Optical imaging metrology calibration using high voltage scanning electron microscope at after-development inspection for advanced processes[C]. Metrology, Inspection, and Process Control for Microlithography XXXIV, 2021. [3] 王芳, 施玉书, 张树, 等. 基于硅晶格常数的纳米线宽计量技术[J]. 计量科学与技术, 2022, 66(4): 13-18,47. [4] 陈修国, 王才, 杨天娟, 等. 集成电路制造在线光学测量检测技术: 现状、挑战与发展趋势[J]. 激光与光电子学进展, 2022, 59(9): 413-436. [5] BELISSARD J, HAZART J, LABBE S, et al. Limits of model-based CD-SEM metrology[C]. 34th European Mask and Lithography Conference, 2018. [6] 国家市场监督管理总局. 扫描电子显微镜校准规范: JJF 1916—2021[S]. 北京: 中国标准出版社, 2021 [7] 王智, 李琪, 黄鹭,等. 扫描电镜纳米颗粒粒径自动检测算法[J]. 计量学报, 2020, 41(10): 1199-1204. doi: 10.3969/j.issn.1000-1158.2020.10.04 [8] 张晓东, 赵琳, 韩志国, 等. 基于图像处理的线距测量方法[J]. 激光与光电子学进展, 2020, 57(1): 97-101. [9] 王理, 杨璐, 李文慧, 等. 一维线纹激光比长测量装置及其关键技术[J]. 计量科学与技术, 2022, 66(9): 3-11. [10] 许晓青, 李锁印, 赵琳, 等. 纳米线距标准样片的研制和表征[J]. 微纳电子技术, 2019, 56(9): 754-760. [11] 韩志国, 李锁印, 冯亚南, 等. 纳米级线宽标准样片的设计与制备[J]. 计算机与数字工程, 2021, 49(4): 664-668. [12] NAKAYAMA Y, KAWADA H, YONEDA S, et al. Novel CD-SEM calibration reference consisting of 100-nm pitch grating and positional identification mark[J]. Metrology, Inspection, and Process Control for Microlithography XXI SPIE, 2007, 6518: 1165-1175. [13] BRONSGEEST M. Physics of Schottky electron sources: theory and optimum operation[M]. CRC Press, 2014. [14] VANBREE P J, VANLIEROPC M M, VANDEN BOSCHP P J. On hysteresis in magnetic lenses of electron microscopes[C]. 2010 IEEE International Symposium on Industrial Electronics, 2010. [15] BATTEN C F. Autofocusing and astigmatism correction in the scanning electron microscope[D]. Cambridgeshire: University of Cambridge, 2000. [16] BAUER J, MEZA L R, SCHAEDLER T A, et al. Nanolattices: an emerging class of mechanical metamaterials[J]. Advanced Materials, 2017, 29(40): 1701850. doi: 10.1002/adma.201701850 [17] BUNDAY B D, MACK C A, BORISOV S, et al. Influence of sidewall perturbations of CD-SEM line roughness metrology[C]. Metrology, Inspection, and Process Control for Microlithography XXXIII, 2019. [18] 李卫. 关键尺寸扫描电子显微镜机台的校准方法: 201910952699.4[P]. 2021-04-09. [19] 王芳, 施玉书, 周莹. 高分辨透射电子显微镜的校准方法[J]. 计量科学与技术, 2022, 66(11): 16-19. doi: 10.12338/j.issn.2096-9015.2022.0244 [20] 李旭, 张冉, 张明宇, 等. 透射电子显微镜校准方法[J]. 计量科学与技术, 2021, 65(4): 40-44,18. [21] POSTEK M T. Critical issues in scanning electron microscope metrology[J]. Journal of Research-National Institute of Standards and Technology, 1994, 99: 641. doi: 10.6028/jres.099.059 [22] MACK C A, LORUSSO G F, DELVAUX C. Diagnosing and removing CD-SEM metrology artifacts[C]. Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 2021. [23] ATAKA M, WEED J T, MARTIN P M, et al. CD measurement of angled lines on high-end masks and its calibration method[J]. International Society for Optics and Photonics, 2005, 5992: 59924H. [24] KAWADA H, KE C M, CHENG Y C, et al. Methodologies for Evaluating CD-matching of CD-SEM[C]. Metrology, Inspection, and Process Control for Microlithography XXIII, 2009. [25] BIZEN D, MIZUTANI S, SAKAKIBARA M, et al. CD metrology for EUV resist using high-voltage CD-SEM: shrinkage, image sharpness, repeatability, and line edge roughness[J]. Journal of Micro/Nanolithography, MEMS, and MOEMS, 2019, 18(3): 034004. [26] 施玉书, 张树, 连笑怡, 等. 毫米级纳米几何特征尺寸计量标准装置多自由度激光干涉计量系统[J]. 计量学报, 2020, 41(7): 769-774.