Volume 65 Issue 8
Aug.  2021
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GAO Ying, SUN Yan, WANG Xin, LI Junsheng, TIAN Lei, LI Lanlan, YE Canming. Study on the Relationship between Non-Equilibrium Carrier Lifetime and Injection Level in Single Crystalline Silicon[J]. Metrology Science and Technology, 2021, 65(8): 66-70. doi: 10.12338/j.issn.2096-9015.2019.9050
Citation: GAO Ying, SUN Yan, WANG Xin, LI Junsheng, TIAN Lei, LI Lanlan, YE Canming. Study on the Relationship between Non-Equilibrium Carrier Lifetime and Injection Level in Single Crystalline Silicon[J]. Metrology Science and Technology, 2021, 65(8): 66-70. doi: 10.12338/j.issn.2096-9015.2019.9050

Study on the Relationship between Non-Equilibrium Carrier Lifetime and Injection Level in Single Crystalline Silicon

doi: 10.12338/j.issn.2096-9015.2019.9050
  • Available Online: 2021-04-15
  • Publish Date: 2021-08-01
  • The functional relationship between the non-equilibrium carrier lifetime and the injection level in single crystalline silicon, and the difference between the minority-carrier lifetime and the recombination lifetime of minority- and majority-carrier are elaborated. A set of measured lifetime and injection level data are obtained by the variable light intensity measurement. The function curves of the carrier lifetime and the injection level are obtained by the fitting method, which is consistent with the S-R-H model. According to the theory and experimental results, the scheme of improving the consistency of carrier lifetime measurement is proposed, and the foundation for the production of the minority-carrier lifetime reference material is laid.
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